Simulation of Semiconductor Lithography and Topography

Modeling and simulation of lithography and topography for processes and inspection in fabricating integrated circuits are the subject of this monograph. The introduction begins by establishing an appreciation for the revolutionary impact of the planar IC process, its growth in complexity, and the pace at which technologists are being asked to develop future generations. The role of modeling and simulation in pursuit of this evolving technology, the new opportunities challenging simulation, and essential ingredients necessary in simulation to meet these challenges are then discussed. The interrelationship between CAD tools for traditional IC circuit design and for device development and process technology Technology CAD (TCAD) are described. Process TCAD which follows the timeevolution of the device during processing is further divided into tools which describe the impurity distributions and those which track the topographical features. The latter which includes lithography and deposition and etching simulation is the primary focus of this monograph and a short guide to the historical work and useful texts in the field is given. A brief explanation of the choice of the physically based viewpoint and organizational flow used in presenting the material throughout the monograph concludes this chapter.